CVD 200
Independently developed 8-inch (downward compatible with 6-inch ) plasma enhanced chemical vapor deposition (PECVD) equipment.
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Product Features
1. Based on the thin film deposition scheme of silane system, TEOS and boron phosphorus doping process requirements can be selected;
2. Single-cavity and multi-station design, high production capacity;
3. Independent workstation temperature control, better wafer uniformity and better film quality;
4. The operating system is a software control system developed based on Windows and conforms to semiconductor standard, which is user-friendly and in line with the operating habits of Chinese people;
5. The process spacing of the spray head can be directly adjusted, with simple maintenance and high equipment utilization rate;
6. Downward compatible with 6-inch Wafer;
Application Fields
Mainly used in integrated circuit fields such as logic chips, power devices, sensors, etc., it can deposit thin films of dielectric materials such as SiO2, SiN, SiON, etc.
